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SKU: O553SM4M
Categories: 5G, Integrated Driver Amplifier
5G, Integrated Driver Amplifier
Integrated Driver Amplifier O553SM4M
The O553SM4M is a low noise amplifier operating at 1-6GHz. It provides 20dB gain and 17dBm P1dB output power at 60mA operating current.
The amplifier uses a 4x4mm surface-mount non-leaded ceramic package for hermetic encapsulation. The pin pad surface is gold-plated and suitable for reflow soldering.
Vendor Information
- Vendor: admin
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- Cavity Band Pass Filter, Cavity Filters
Cavity Band Pass OBP-791-32
Ocean Microwave band-pass filter (Ocean band-pass filter，，abbreviation：abbreviation：OBP) is a filter that allows waves of specific frequency band to pass through while rejecting other frequency bands.
The product name of this Ocean band-pass filter (OBP) is OBP-791-32,its Center Frequency(F0) is 791MHz, its Pass Band Bandwidth is 775～807MHz, its Pass Band Insertion Loss is ≤1.0dB, and its Pass Band VSWR is ≤1.3:1. The Stop Band Rejection is ≥50dB @ 881.5MHz.SKU: OBP-791-32 - Aircrafts, Application, Defense Equipment, EMI/EMF/EMC, Ground Testing, Medical Equipment, Milcom, National Safety, Offshore Marine, On-board Comm., Passive Devices, Public Safety, Radar, rd-offshore-marine, RF Filter Highpass, RF Filters, Satellite Testing, Signal Filteration, Signal Processing, sp-signal-filteration, Testing & Measurement
RF Filter Highpass OWBP-9000-10
Aircrafts, Application, Defense Equipment, EMI/EMF/EMC, Ground Testing, Medical Equipment, Milcom, National Safety, Offshore Marine, On-board Comm., Passive Devices, Public Safety, Radar, rd-offshore-marine, RF Filter Highpass, RF Filters, Satellite Testing, Signal Filteration, Signal Processing, sp-signal-filteration, Testing & MeasurementRF Filter Highpass OWBP-9000-10
Model OWBP-9000-10 is a W band waveguide highpass filter with a passband frequency of 90 GHz and higher and a rejection frequency from DC to 84 GHz.
The filter provides a nominal insertion loss of 1.0 dB across its passband with a low ripple and a typical rejection of 40 dB. Since the low side cutoff frequency can be changed by modifying the design, custom designs can be offered under different model numbers.
SKU: OWBP-9000-10 - E-Testing ECO, LL335i, RF Cables
SMA Male to Right Angle SMA Male LL335i Coax and RoHSF040-321S0-321R0-180-N
E-Testing ECO, LL335i, RF CablesSMA Male to Right Angle SMA Male LL335i Coax and RoHSF040-321S0-321R0-180-N
High performance test cable’s 0.3 inch diameter and 83% phase velocity offer very low loss performance up to 18 GHz.
The durable stainless steel connectors and FEP jacket provide a cost effective design ideal for test environments where a rugged cable assembly is required. A heavy duty boot provides improved strain relief and adds to the durability of the cable assemblies. These cable assemblies are built using a double shielded flexible cable, providing excellent shielding effectiveness of greater than 95 dB.
Cable assemblies are 100% continuity and RF tested to published specifications. Custom lengths are built to order and shipped same day.
SKU: F040-321S0-321R0-180-N
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- 5G, GaN, GaN Monolithic Integrated Driver Amplifier
GaN Monolithic Integrated Driver Amplifier O570
The O570 is a GaN monolithic integrated driver amplifier chip operating at 8.0-12.0GHz delivering 16dB of power gain and 24dBm of saturated output power at + 28V operating voltage.
The chip uses on-chip through-hole metallization process to ensure a good grounding, do not need additional grounding measures, easy to use. The back of the chip was metallized, suitable for eutectic sintering or conductive adhesive bonding process.
SKU: O570 - 5G, GaN, GaN Monolithic Integrated Driver Amplifier
GaN Monolithic Integrated Driver Amplifier O579
The O579 is a GaN monolithically integrated driver amplifier chip operating at 1.2 to 1.6 GHz delivering 23dB of power gain and 26.5dBm of saturated output power at + 28V operating voltage.
The chip uses on-chip through-hole metallization process to ensure a good grounding, do not need additional grounding measures, easy to use. The back of the chip was metallized, suitable for eutectic sintering or conductive adhesive bonding process.
SKU: O579 - 5G, GaN, GaN Monolithic Integrated Driver Amplifier
GaN Monolithic Integrated Driver Amplifier O575
The O575 is a GaN monolithic integrated driver amplifier chip, dual power supply +28 V work, operating frequency coverage 2 ~ 6GHz. At 130mA operating current, can provide 18dB power gain, 26dBm of saturated output power.
The chip uses on-chip through-hole metallization process to ensure a good grounding, do not need additional grounding measures, easy to use. The back of the chip was metallized, suitable for eutectic sintering process.
SKU: O575 - 5G, GaAs, GaAs Monolithic Integrated Power Amplifier
GaAs Monolithic Integrated Power Amplifier O222G
5G, GaAs, GaAs Monolithic Integrated Power AmplifierGaAs Monolithic Integrated Power Amplifier O222G
The O222G is a GaAs monolithic integrated power amplifier chip operating at 8.0-12.0GHz delivering 21dB of power gain and 29dBm of saturated output power at + 8V operating power with an additional power efficiency of 30%.
The chip uses on-chip through-hole metallization process to ensure a good grounding, do not need additional grounding measures, easy to use. The back of the chip was metallized, suitable for eutectic sintering process.
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The O1193 is a 2.7-3.5GHz GaN monolithic integrated power amplifier chip. It provides 24dB power gain and 40dBm saturated output power with pulse width of 100us, duty cycle of 10%, and +28V operating voltage. Power-added efficiency 40%.
The power amplifier chip adopts an on-chip via hole metallization process to ensure good grounding, no additional grounding measures are needed, and the use is simple and convenient. The backside of the chip is metallized and is suitable for eutectic sintering processes.
SKU: n/a
