Integrated Power Amplifier O259SM7H


The O259SM7H is a GaN integrated power amplifier operating at 2.7~3.5GHz. With a +28V operating voltage, 21dB power gain, 41dBm saturated output power and 48% power efficiency can be provided.

The amplifier adopts 7x7mm surface-mount non-leaded ceramic package, which can realize gas-tight encapsulation. The surface of the pin pad is processed by gold plating and is suitable for reflow soldering installation process.

SKU: O259SM7H Categories: ,

Vendor Information

  • Store Name: RFecho
  • Vendor: RFecho
  • Address: Beijing / 北京, Beijing, Building 58# Caihuying Fengtai District, 12 Floor Caifuxihuan
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