RF Connector 1.85mm (V) D180-P12-F04
D180-P12-F04, RF Connector 1.85mm are durable, operational temperature rating of -55°C to +165°C. RF Connector 1.85mm provide mode-free operation through
67 GHz, offering well-matched impedance, excellent repeatability, having the low VSWR and RF leakage (≤ -100 dB).
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- Antenna, Antenna Array, Application, Conical Antenna, Gain Measurement Systems, National Safety, Point to Point Radio, Radar, Radio Communication TX/RX, Satcom, Satellite Testing, Telecom, Testing & Measurement
Conical Antenna OCN-10-23Antenna, Antenna Array, Application, Conical Antenna, Gain Measurement Systems, National Safety, Point to Point Radio, Radar, Radio Communication TX/RX, Satcom, Satellite Testing, Telecom, Testing & Measurement
Conical Antenna OCN-10-23
Model OCN-10-23 is a W-band conical horn antenna with a WR-10 rectangular waveguide interface that operates from 87 to 100 GHz.The antenna offers 23 dBinominal gain and a typical half power beamwidth of 11degrees on the E-plane and 13 degrees on the H-plane. Thehorn also offers typical side lobes of 20 dB on the E-planeand 28 dB on the H-plane.
The conical horn can supportlinear polarization. The RF connector of this antenna is a WR-10 waveguide with UG-387/U-M flange.SKU: OCN-10-23
- E-System FLEX, RF Cables, RG-178
SSMC Plug to SSMC Jack Bulkhead RG178 Coax and RoHS F074-381S0-380S1-30-NE-System FLEX, RF Cables, RG-178
SSMC Plug to SSMC Jack Bulkhead RG178 Coax and RoHS F074-381S0-380S1-30-N
RF cable assembly RG178 coax is one of a huge selection of coaxial cables for radio, antenna and interconnect with RF components. RFecho’s RF coaxial cable assembly products are designed for typical use, production, laboratory test and measurement, defense / military and aerial antenna towers.SKU: F074-381S0-380S1-30-N
- 5G, GaAs, GaAs Monolithic Integrated 0 Degree Power
GaAs Monolithic Integrated 0 Degree Power O1604
O1604 type GaAs monolithic 0 degree power splitter has low insertion loss and excellent port standing wave characteristics in the frequency range of 3.0 ~ 9.0 GHz, isolation greater than 18dB, and is very suitable for microwave hybrid integrated circuits and multi-chips Module.
The chip uses on-chip via metallization process to ensure a good grounding, no additional grounding measures, easy to use. The backside of the chip is metallized and suitable for eutectic sintering or conductive adhesive bonding processes.SKU: n/a
- 5G, GaN, GaN Monolithic Integrated Power Amplifier
GaN Monolithic Integrated Power Amplifier O1195
The O1195 is a GaN monolithic integrated power amplifier chip operating at
4.4-5.1GHz. With a pulse width of 100us, a duty cycle of 10%, and a +28V operating voltage, it provides 19dB of power gain and 40dBm of saturated output power.
Power-added efficiency 48%.
The power amplifier chip adopts an on-chip via hole metallization process to ensure good grounding, no additional grounding measures are needed, and the use is simple and convenient. The backside of the chip is metallized and is suitable for eutectic sintering processes.SKU: n/a